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Effect of negative oxygen ion bombardment during plasma sputtering process as a cruvial origin of deep defect related instability of InGaZnO thin film transistorEffect of negative oxygen ion bombardment during plasma sputtering process as a cruvial origin of deep defect related instability of InGaZnO thin film transistor
- Alternative Title
- Effect of negative oxygen ion bombardment during plasma sputtering process as a cruvial origin of deep defect related instability of InGaZnO thin film transistor
- Authors
- Hong MunPyo
- Issue Date
- 26-2월-2015
- Publisher
- universite de RENNES
- Citation
- ITC2015 - 11th International Thin-Film Transistor Conference
- Conference Name
- ITC2015 - 11th International Thin-Film Transistor Conference
- Place
- FR
- Conference Date
- 2015-02-26
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- Appears in
Collections - Graduate School > Department of Applied Physics > 2. Conference Papers
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