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Effects of the Bombardment of Negative Oxygen lons on Gate Bias Stability of InGaZnO Thin Film Transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hong MunPyo | - |
| dc.date.accessioned | 2021-08-29T08:25:01Z | - |
| dc.date.available | 2021-08-29T08:25:01Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2014-10-07 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/38582 | - |
| dc.publisher | the Eletrochemical Society | - |
| dc.title | Effects of the Bombardment of Negative Oxygen lons on Gate Bias Stability of InGaZnO Thin Film Transistors | - |
| dc.title.alternative | Effects of the Bombardment of Negative Oxygen lons on Gate Bias Stability of InGaZnO Thin Film Transistors | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Hong MunPyo | - |
| dc.identifier.bibliographicCitation | 226th ECS Meeting | - |
| dc.relation.isPartOf | 226th ECS Meeting | - |
| dc.relation.isPartOf | 226th ECS Meeting | - |
| dc.citation.title | 226th ECS Meeting | - |
| dc.citation.conferencePlace | MX | - |
| dc.citation.conferenceDate | 2014-10-05 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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