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Effects of the Bombardment of Negative Oxygen lons on Gate Bias Stability of InGaZnO Thin Film TransistorsEffects of the Bombardment of Negative Oxygen lons on Gate Bias Stability of InGaZnO Thin Film Transistors
- Alternative Title
- Effects of the Bombardment of Negative Oxygen lons on Gate Bias Stability of InGaZnO Thin Film Transistors
- Authors
- Hong MunPyo
- Issue Date
- 7-10월-2014
- Publisher
- the Eletrochemical Society
- Citation
- 226th ECS Meeting
- Conference Name
- 226th ECS Meeting
- Place
- MX
- Conference Date
- 2014-10-05
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Collections - Graduate School > Department of Applied Physics > 2. Conference Papers
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