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Modeling of electrical characteristics using genetic algorithm for low temperature silicon nitride deposited by inner two parallel cylindrical coil ICPCVDModeling of electrical characteristics using genetic algorithm for low temperature silicon nitride deposited by inner two parallel cylindrical coil ICPCVD
- Alternative Title
- Modeling of electrical characteristics using genetic algorithm for low temperature silicon nitride deposited by inner two parallel cylindrical coil ICPCVD
- Authors
- PARK KANG-BAK
- Issue Date
- 9-7월-2014
- Publisher
- KVS
- Citation
- ICMAP 2014
- Conference Name
- ICMAP 2014
- Place
- KO
- Conference Date
- 2014-07-08
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