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SCIE
SCOPUS
Analytical Model of Contact Resistance in Vertically Stacked Nanosheet FETs for Sub-3-nm Technology Node
Jung, Seung-Geun; Kim, Jeong-Kyu;
Yu, Hyun-Yong
Article
Issue Date
2022
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.3, pp.930 - 935
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
1
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Author
Jung, Seung-Geun
1
Kim, Jeong-Kyu
1
Subject
Contact resistance
1
contact resistivity
1
contact size
1
COSI2
1
DEPENDENCE
1
drain
1
gate-all around FET (GAAFET)
1
INTERFACES
1
N-TYPE
1
nanosheet FET (NSHFET)
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