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SCOPUS
Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application
Lee, Tae Ho; Kang, Dae Yun;
Kim, Tae Geun
Article
Issue Date
2018
Citation
ACS APPLIED MATERIALS & INTERFACES, v.10, no.40, pp.33768 - 33772
Publisher
AMER CHEMICAL SOC
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Author
Lee, Tae Ho
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Kim, Tae geun
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Subject
conductive channel
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programmable metallization cell
1
resistive switching
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sneak current
1
threshold switching
1
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2018
1
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English
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ACS Applied Materials and Interfaces
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