Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application
- Authors
- Lee, Tae Ho; Kang, Dae Yun; Kim, Tae Geun
- Issue Date
- 10-10월-2018
- Publisher
- AMER CHEMICAL SOC
- Keywords
- threshold switching; resistive switching; programmable metallization cell; sneak current; conductive channel; crossbar array
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.10, no.40, pp.33768 - 33772
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 10
- Number
- 40
- Start Page
- 33768
- End Page
- 33772
- ISSN
- 1944-8244
- Abstract
- We fabricate a Pt/Ag:SiOxNy/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiOxNy layers showed self-limiting TS characteristics with high selectivity and extremely low OFF currents, whereas the same cell showed typical RS characteristics after thermal annealing at 250 degrees C. The operating mechanism was investigated using scanning transmission electron microscopy and X-ray photoelectron spectroscopy. Next, a Ag:SiOxNy-based one selector-one resistor device was fabricated by employing both TS and RS characteristics in a single cell, which exhibited excellent self-rectifying memory performance.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.