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New mechanism for incline crystal growth and carrier path transistion in extremely highly doped polymorphous silicon thin film formated by neutral beam assisted CVD process near room temperature
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hong MunPyo | - |
| dc.date.accessioned | 2021-08-29T17:45:25Z | - |
| dc.date.available | 2021-08-29T17:45:25Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2013-05-13 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/44308 | - |
| dc.publisher | the Eletrochemical Society | - |
| dc.title | New mechanism for incline crystal growth and carrier path transistion in extremely highly doped polymorphous silicon thin film formated by neutral beam assisted CVD process near room temperature | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Hong MunPyo | - |
| dc.identifier.bibliographicCitation | 223rd ECS Meeting | - |
| dc.relation.isPartOf | 223rd ECS Meeting | - |
| dc.relation.isPartOf | 223rd ECS Meeting | - |
| dc.citation.title | 223rd ECS Meeting | - |
| dc.citation.conferencePlace | CN | - |
| dc.citation.conferencePlace | Toronto, ON, Canada | - |
| dc.citation.conferenceDate | 2013-05-12 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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