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New mechanism for incline crystal growth and carrier path transistion in extremely highly doped polymorphous silicon thin film formated by neutral beam assisted CVD process near room temperature
- Authors
- Hong MunPyo
- Issue Date
- 13-5월-2013
- Publisher
- the Eletrochemical Society
- Citation
- 223rd ECS Meeting
- Conference Name
- 223rd ECS Meeting
- Place
- CN
Toronto, ON, Canada
- Conference Date
- 2013-05-12
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Collections - Graduate School > Department of Applied Physics > 2. Conference Papers
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