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New Approaches for overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film

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dc.contributor.authorHong MunPyo-
dc.date.accessioned2021-08-29T20:48:39Z-
dc.date.available2021-08-29T20:48:39Z-
dc.date.created2021-04-22-
dc.date.issued2012-02-09-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/46174-
dc.publisher(사)한국진공학회(KVS)-
dc.subjectPlasma Damage Free Sputter, Low TemperatureProcess, TCO, AOS, Gas Barrier-
dc.titleNew Approaches for overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film-
dc.typeConference-
dc.contributor.affiliatedAuthorHong MunPyo-
dc.identifier.bibliographicCitation제42회 동계학술대회-
dc.relation.isPartOf제42회 동계학술대회-
dc.relation.isPartOf제 42회 한국진공학회 동계 정기 학술대회 프로그램집-
dc.citation.title제42회 동계학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferencePlace보광휘닉스파크(강원도평창)-
dc.citation.conferenceDate2012-02-08-
dc.type.rimsCONF-
dc.description.journalClass2-
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