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Effect of SiNx interlayer inserted in a-plane GaN on r-plane sapphire grown by metal-orgarnic chemical vapor depositionEffect of SiNx interlayer inserted in a-plane GaN on r-plane sapphire grown by metal-orgarnic chemical vapor deposition
- Alternative Title
- Effect of SiNx interlayer inserted in a-plane GaN on r-plane sapphire grown by metal-orgarnic chemical vapor deposition
- Authors
- PARK, JUNG HO
- Issue Date
- 14-10월-2011
- Publisher
- MTS/IEEE
- Citation
- IMID 2011
- Conference Name
- IMID 2011
- Place
- KO
- Conference Date
- 2011-10-11
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- Appears in
Collections - College of Engineering > School of Electrical Engineering > 2. Conference Papers
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