Improving Performance of GaAs-Based Vertical-Cavity Surface-Emitting Lasers by Employing Thermally Conductive Metal Substrate
- Authors
- Yum, Woong-Sun; Lee, Sang-Youl; Kim, Myung-Sub; Yoon, Su-Jung; Oh, Jeong-Tak; Jeong, Hwan-Hee; Seong, Tae-Yeon
- Issue Date
- 1-1월-2021
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.10, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
- Volume
- 10
- Number
- 1
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/50175
- DOI
- 10.1149/2162-8777/abd886
- ISSN
- 2162-8769
- Abstract
- We investigated the effect of the conducting substrate on the performance of GaAs-based VCSELs, where the substrates were 230 mu m-GaAs (reference), 10 mu m-GaAs/metal, and 0.5 mu m-GaAs/metal. The VCSELs with the 10 mu m- and 0.5 mu m thick GaAs/metal-substrates produced higher light output power than the reference. For example, the thin GaAs/metal substrate samples showed 16.3%-16.7% higher light output power at 3.0 A than the reference. It was shown that the thin GaAs samples produced 12.2%-14.0% higher power conversion efficiency at 3.0 A than the reference. At a high current region, the metal-substrate samples yielded lower junction temperature than the reference, namely, the thin GaAs samples gave 42 degrees C-47.4 degrees C lower junction temperature at 2.0 A than the reference. Further, the thin GaAs samples revealed better light output degradation characteristics than the reference. For instance, the light output of the reference was degraded by 30.2% at 85 degrees C, whereas the thin GaAs samples were degraded by 20.1%-20.5%. Near-field images and emission profiles demonstrated that the metal-substrate samples suffered from no damage incurred during the VCSEL fabrication process. (c) 2021 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.
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