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트렌치 게이트 하단의 산화막 확장을 통한 트렌치IGBT의 항복전압 향상에 대한연구A Study on Breakdown Voltage Improvement of the Trench IGBT by Extending a Gate Oxide Region Beneath the Trench Gate
- Alternative Title
- A Study on Breakdown Voltage Improvement of the Trench IGBT by Extending a Gate Oxide Region Beneath the Trench Gate
- Authors
- Sung, Man Young
- Keywords
- TIGBT, Breakdown Voltage
- Issue Date
- 7-11월-2008
- Publisher
- 한국전기전자재료학회(KIEEME)
- Citation
- 2008 한국전기전자재료학회 추계학술대회, pp.74 - 75
- Conference Name
- 2008 한국전기전자재료학회 추계학술대회
- Place
- KO
KIST 국제협력관, 서울
- Conference Date
- 2008-11-06
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- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 2. Conference Papers
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