A Ku-Band GaAs Multifunction Transmitter and Receiver Chipset
- Authors
- Lee, Hyunkyu; Kim, Younghwan; Lee, Iljin; Kim, Dongkyo; Park, Kwangwon; Jeon, Sanggeun
- Issue Date
- 8월-2020
- Publisher
- MDPI
- Keywords
- multifunction; transmitter; receiver; attenuator; phase shifter; medium power amplifier; low-noise amplifier; serial-to-parallel converter
- Citation
- ELECTRONICS, v.9, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS
- Volume
- 9
- Number
- 8
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/54296
- DOI
- 10.3390/electronics9081327
- ISSN
- 2079-9292
- Abstract
- This paper presents a Ku-band monolithic multifunction transmitter and receiver chipset fabricated in 0.25-mu m GaAs pseudomorphic high-electron mobility transistor technology. The chipset achieves a high level of integration, including a 4-bit 360 degrees digital phase shifter, 5-bit 15.5-dB digital attenuator, amplifier and 9-bit digital serial-to-parallel converter for digital circuit control. Since the multifunction chipset includes a medium power amplifier and a low-noise amplifier, it features high P1dB and low noise figures over the full Ku-band frequencies. The multifunction transmitter shows a peak gain of 16.5 dB with output P1dB of 19.2 dBm at 15 GHz. The multifunction receiver shows a peak gain of 17.3 dB with noise figure of 2.5 dB at 15 GHz. The attenuation range is 15.5 dB with a step of 0.5 dB and the phase shift range is 360 degrees with a step of 22.5 degrees. Each chip area of the transmitter and receiver is 4.2 x 2.8 mm(2).
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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