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A Ku-Band GaAs Multifunction Transmitter and Receiver Chipset

Authors
Lee, HyunkyuKim, YounghwanLee, IljinKim, DongkyoPark, KwangwonJeon, Sanggeun
Issue Date
8월-2020
Publisher
MDPI
Keywords
multifunction; transmitter; receiver; attenuator; phase shifter; medium power amplifier; low-noise amplifier; serial-to-parallel converter
Citation
ELECTRONICS, v.9, no.8
Indexed
SCIE
SCOPUS
Journal Title
ELECTRONICS
Volume
9
Number
8
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/54296
DOI
10.3390/electronics9081327
ISSN
2079-9292
Abstract
This paper presents a Ku-band monolithic multifunction transmitter and receiver chipset fabricated in 0.25-mu m GaAs pseudomorphic high-electron mobility transistor technology. The chipset achieves a high level of integration, including a 4-bit 360 degrees digital phase shifter, 5-bit 15.5-dB digital attenuator, amplifier and 9-bit digital serial-to-parallel converter for digital circuit control. Since the multifunction chipset includes a medium power amplifier and a low-noise amplifier, it features high P1dB and low noise figures over the full Ku-band frequencies. The multifunction transmitter shows a peak gain of 16.5 dB with output P1dB of 19.2 dBm at 15 GHz. The multifunction receiver shows a peak gain of 17.3 dB with noise figure of 2.5 dB at 15 GHz. The attenuation range is 15.5 dB with a step of 0.5 dB and the phase shift range is 360 degrees with a step of 22.5 degrees. Each chip area of the transmitter and receiver is 4.2 x 2.8 mm(2).
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Jeon, Sang geun
공과대학 (전기전자공학부)
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