Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor
DC Field | Value | Language |
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dc.contributor.author | Woo, Sola | - |
dc.contributor.author | Cho, Jinsun | - |
dc.contributor.author | Lim, Doohyeok | - |
dc.contributor.author | Park, Young-Soo | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-08-30T20:21:06Z | - |
dc.date.available | 2021-08-30T20:21:06Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2020-07 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/54850 | - |
dc.description.abstract | In this article, we propose an integrate-and-fire (IF) neuron circuit using a single-gated silicon nanowire feedback field-effect transistor that utilizes a positive feedback loop. The IF operations are investigated through mixed-mode technology computer-aided design simulations. The neuron circuit composed of four component transistors (plus one capacitor) exhibits a high firing frequency of similar to 20 kHz and low power and energy consumption of 7 mu W and 2.9 x 10(-15) J. The firing frequency and spiking voltage can be controlled through external biasing voltages. Our novel neuron circuit demonstrates a promising potential for use in spiking neural network hardware for very large-scale integration. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | SPIKING | - |
dc.subject | NETWORK | - |
dc.title | Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1109/TED.2020.2995785 | - |
dc.identifier.scopusid | 2-s2.0-85087338138 | - |
dc.identifier.wosid | 000542842800051 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.7, pp.2995 - 3000 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 67 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 2995 | - |
dc.citation.endPage | 3000 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SPIKING | - |
dc.subject.keywordPlus | NETWORK | - |
dc.subject.keywordAuthor | Feedback field-effect transistors (FBFETs) | - |
dc.subject.keywordAuthor | integrate-and-fire (IF) neuron | - |
dc.subject.keywordAuthor | positive feedback loop | - |
dc.subject.keywordAuthor | spiking neural networks (SNNs) | - |
dc.subject.keywordAuthor | TCAD simulation | - |
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