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Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor

Authors
Woo, SolaCho, JinsunLim, DoohyeokPark, Young-SooCho, KyoungahKim, Sangsig
Issue Date
7월-2020
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Feedback field-effect transistors (FBFETs); integrate-and-fire (IF) neuron; positive feedback loop; spiking neural networks (SNNs); TCAD simulation
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.7, pp.2995 - 3000
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume
67
Number
7
Start Page
2995
End Page
3000
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/54850
DOI
10.1109/TED.2020.2995785
ISSN
0018-9383
Abstract
In this article, we propose an integrate-and-fire (IF) neuron circuit using a single-gated silicon nanowire feedback field-effect transistor that utilizes a positive feedback loop. The IF operations are investigated through mixed-mode technology computer-aided design simulations. The neuron circuit composed of four component transistors (plus one capacitor) exhibits a high firing frequency of similar to 20 kHz and low power and energy consumption of 7 mu W and 2.9 x 10(-15) J. The firing frequency and spiking voltage can be controlled through external biasing voltages. Our novel neuron circuit demonstrates a promising potential for use in spiking neural network hardware for very large-scale integration.
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