Enhancement of Withstand Voltage in Silicon Strain Gauges Using a Thin Alkali-Free Glass
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Joon Hyub | - |
dc.contributor.author | Han, Ji-Hoon | - |
dc.contributor.author | Park, Chan Won | - |
dc.contributor.author | Min, Nam Ki | - |
dc.date.accessioned | 2021-08-30T21:33:29Z | - |
dc.date.available | 2021-08-30T21:33:29Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2020-06 | - |
dc.identifier.issn | 1424-8220 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/55101 | - |
dc.description.abstract | We present a cost-effective approach to produce silicon strain gauges that can withstand very high voltage without using any complex package design and without sacrificing any sensor performance. This is achieved by a special silicon strain gauge structure created on an alkali-free glass substrate that has a high breakdown voltage. A half-bridge silicon strain gauge is designed, fabricated, and then tested to measure its output characteristics. The device has a glass layer that is only 25-55 mu m thick; it shows it is able to withstand a voltage of over 2000 V while maintaining a high degree of linearity with correlation coefficients higher than 0.9990 and an average sensitivity of 104.13. Due to their unique electrical properties, silicon strain gauges-on-glass chips hold much promise for use in advanced force and pressure sensors. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.subject | BREAKDOWN | - |
dc.title | Enhancement of Withstand Voltage in Silicon Strain Gauges Using a Thin Alkali-Free Glass | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Min, Nam Ki | - |
dc.identifier.doi | 10.3390/s20113024 | - |
dc.identifier.scopusid | 2-s2.0-85085603255 | - |
dc.identifier.wosid | 000552737900017 | - |
dc.identifier.bibliographicCitation | SENSORS, v.20, no.11 | - |
dc.relation.isPartOf | SENSORS | - |
dc.citation.title | SENSORS | - |
dc.citation.volume | 20 | - |
dc.citation.number | 11 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Analytical | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.subject.keywordPlus | BREAKDOWN | - |
dc.subject.keywordAuthor | strain gauge | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | alkali-free glass | - |
dc.subject.keywordAuthor | high withstand voltage | - |
dc.subject.keywordAuthor | micro-electromechanical system (MEMS) | - |
dc.subject.keywordAuthor | piezoresistive sensor | - |
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