Enhancement of Withstand Voltage in Silicon Strain Gauges Using a Thin Alkali-Free Glass
- Authors
- Kim, Joon Hyub; Han, Ji-Hoon; Park, Chan Won; Min, Nam Ki
- Issue Date
- 6월-2020
- Publisher
- MDPI
- Keywords
- strain gauge; silicon; alkali-free glass; high withstand voltage; micro-electromechanical system (MEMS); piezoresistive sensor
- Citation
- SENSORS, v.20, no.11
- Indexed
- SCIE
SCOPUS
- Journal Title
- SENSORS
- Volume
- 20
- Number
- 11
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/55101
- DOI
- 10.3390/s20113024
- ISSN
- 1424-8220
- Abstract
- We present a cost-effective approach to produce silicon strain gauges that can withstand very high voltage without using any complex package design and without sacrificing any sensor performance. This is achieved by a special silicon strain gauge structure created on an alkali-free glass substrate that has a high breakdown voltage. A half-bridge silicon strain gauge is designed, fabricated, and then tested to measure its output characteristics. The device has a glass layer that is only 25-55 mu m thick; it shows it is able to withstand a voltage of over 2000 V while maintaining a high degree of linearity with correlation coefficients higher than 0.9990 and an average sensitivity of 104.13. Due to their unique electrical properties, silicon strain gauges-on-glass chips hold much promise for use in advanced force and pressure sensors.
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Collections - College of Science and Technology > Department of Electro-Mechanical Systems Engineering > 1. Journal Articles
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