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Electrical characteristics of bendable a-ITGZO TFTs on colorless polyimide substrates
- Authors
- Lee, Hosang; Cho, Kyoungah; Kim, Donghyun; Kim, Sangsig
- Issue Date
- 6월-2020
- Publisher
- IOP PUBLISHING LTD
- Keywords
- amorphous indium tin gallium zinc oxide; colorless polyimide; bendable oxide thin-film transistors; bending radius; compressive stress; tensile stress
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 35
- Number
- 6
- ISSN
- 0268-1242
- Abstract
- In this study, we fabricate amorphous indium tin gallium zinc oxide (a-ITGZO) thin-film transistors (TFTs) on colorless polyimide (CPI) substrates and examine their electrical characteristics as functions of the bending radius. A representative a-ITGZO TFT shows typical n-type behavior and operates with a mobility of 34.32 cm(2) V-1 s(-1), threshold voltage of -0.71 V, subthreshold swing of 169 mV, and on/off ratio of 2 x 10(7). The a-ITGZO TFT operates stably even under a bending radius of 2 mm, regardless of the upward or downward bending. The thickness of the thin CPI substrate contributes to the stable operation of the bent TFT.
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