WR-1.5 High-Power Frequency Doubler in 130-nm InP HBT Technology
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Iljin | - |
dc.contributor.author | Jeon, Sanggeun | - |
dc.date.accessioned | 2021-08-31T01:13:31Z | - |
dc.date.available | 2021-08-31T01:13:31Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-05 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/56134 | - |
dc.description.abstract | This letter presents a WR-1.5 frequency doubler implemented in a 130-nm InP heterojunction-bipolar-transistor (HBT) technology. The doubler core uses a differential common-emitter transistor to improve the stability and to ease the fundamental suppression. The output power is maximized by the source-pull and load-pull simulation. The input and output matching to the optimum impedance is implemented using a single transmission line. This simple matching structure reduces the modeling inaccuracy and the passive component loss at the terahertz frequencies. The output power of the doubler was measured in the frequency range of 590-610 GHz. The doubler exhibits the maximum output power of -5 dBm and conversion loss of 14 dB at 590 GHz without additional drive amplifiers. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | WR-1.5 High-Power Frequency Doubler in 130-nm InP HBT Technology | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanggeun | - |
dc.identifier.doi | 10.1109/LMWC.2020.2980672 | - |
dc.identifier.scopusid | 2-s2.0-85085256359 | - |
dc.identifier.wosid | 000536289600014 | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.30, no.5, pp.504 - 507 | - |
dc.relation.isPartOf | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.volume | 30 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 504 | - |
dc.citation.endPage | 507 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordAuthor | Impedance | - |
dc.subject.keywordAuthor | Power generation | - |
dc.subject.keywordAuthor | Indium phosphide | - |
dc.subject.keywordAuthor | III-V semiconductor materials | - |
dc.subject.keywordAuthor | Stability analysis | - |
dc.subject.keywordAuthor | Heterojunction bipolar transistors | - |
dc.subject.keywordAuthor | Frequency doubler | - |
dc.subject.keywordAuthor | InP heterojunction-bipolar transistor (HBT) technology | - |
dc.subject.keywordAuthor | terahertz | - |
dc.subject.keywordAuthor | WR-15 band | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.