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WR-1.5 High-Power Frequency Doubler in 130-nm InP HBT Technology

Authors
Lee, IljinJeon, Sanggeun
Issue Date
5월-2020
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Impedance; Power generation; Indium phosphide; III-V semiconductor materials; Stability analysis; Heterojunction bipolar transistors; Frequency doubler; InP heterojunction-bipolar transistor (HBT) technology; terahertz; WR-15 band
Citation
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.30, no.5, pp.504 - 507
Indexed
SCIE
SCOPUS
Journal Title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume
30
Number
5
Start Page
504
End Page
507
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/56134
DOI
10.1109/LMWC.2020.2980672
ISSN
1531-1309
Abstract
This letter presents a WR-1.5 frequency doubler implemented in a 130-nm InP heterojunction-bipolar-transistor (HBT) technology. The doubler core uses a differential common-emitter transistor to improve the stability and to ease the fundamental suppression. The output power is maximized by the source-pull and load-pull simulation. The input and output matching to the optimum impedance is implemented using a single transmission line. This simple matching structure reduces the modeling inaccuracy and the passive component loss at the terahertz frequencies. The output power of the doubler was measured in the frequency range of 590-610 GHz. The doubler exhibits the maximum output power of -5 dBm and conversion loss of 14 dB at 590 GHz without additional drive amplifiers.
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Jeon, Sang geun
공과대학 (전기전자공학부)
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