Physics-based compact model of transient leakage current caused by parasitic bipolar junction transistor in gate-all-around MOSFETs Foreword
- Authors
- Yi, Boram; Park, Yeong-Hun; Yang, Ji-Woon
- Issue Date
- 2월-2020
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Compact model; Transient leakage current; GAA MOSFETs; Parasitic BJT
- Citation
- SOLID-STATE ELECTRONICS, v.164
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 164
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/57746
- DOI
- 10.1016/j.sse.2019.107739
- ISSN
- 0038-1101
- Abstract
- In this study, transient leakage current caused by a parasitic bipolar junction transistor (BJT) in nanowire-type gate-all-around metal-oxide-semiconductor field-effect transistors is physically modeled for circuit design. The model considers the majority carrier concentration in the body, which is modulated by the gate-to-body bias. The parasitic BJT gain is dependent on the majority carrier concentration, which exceeds the body doping concentration in transient conditions. Three-dimensional technology computer-aided design simulation is performed to verify the model. The model accurately predicts the transient leakage current according to various structural parameters.
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Collections - Graduate School > Department of Electronics and Information Engineering > 1. Journal Articles
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