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Structural combination of polar hollow microspheres and hierarchical N-doped carbon nanotubes for high-performance Li-S batteries

Authors
Lee, Jun YeobPark, Gi DaeChoi, Jae HunKang, Yun Chan
Issue Date
21-1월-2020
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v.12, no.3, pp.2142 - 2153
Indexed
SCIE
SCOPUS
Journal Title
NANOSCALE
Volume
12
Number
3
Start Page
2142
End Page
2153
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/57974
DOI
10.1039/c9nr09807k
ISSN
2040-3364
Abstract
Hierarchical structured materials constructed with conductive carbon materials have been extensively studied as S host materials for Li-S batteries. However, their outwardly developed hierarchical structures, which do not contain structures or materials to inhibit polysulfide dissolution, lead to the dissipation of dissolved polysulfides and poor dispersion properties during the slurry-making process, which results in non-uniformity in the cathodes. Herein, an assembly of polar materials (hollow structured SiO2 microspheres) and electrically conductive hierarchical N-doped bamboo-like carbon nanotubes (b-NCNTs) is designed as an efficient S host material for minimizing the dissolution of polysulfides during Li-S battery operations. Highly aligned and packed b-NCNTs are grown in hollow structured SiO2 microspheres. The SiO2 layer coated on the surface of the hollow CoFe2O4 microspheres plays a key role in the synthesis of easily dispersible hierarchical b-NCNTs microspheres (b-NCNTs@SiO2). The S-loaded b-NCNTs@SiO2 electrodes show better cycling stability than S-loaded b-NCNTs electrodes. The polysulfide trapping of the polar SiO2 layer and the well-developed b-NCNTs minimize the dissolution of polysulfides during cycling. In addition, the introduction of electronegative N atoms into the b-NCNTs lattice enhances their polysulfide trapping ability. The S-loaded b-NCNTs@SiO2 electrodes exhibit stable discharge capacities of >771 mA h g(-1) over 195 cycles at a current density of 0.5 C and a high reversible capacity of 486 mA h g(-1) even at a high current density of 5.0 C.
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