Ultra-Wide Bandgap beta-Ga(2)O(3)Heterojunction Field-Effect Transistor Using p-Type 4H-SiC Gate for Efficient Thermal Management
- Authors
- Lee, Dongryul; Kim, Hyoung Woo; Kim, Janghyuk; Moon, Jeong Hyun; Lee, Geonyeop; Kim, Jihyun
- Issue Date
- 8-1월-2020
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- Electron Devices; gallium oxide; Microelectrnics; Semiconductor Materials
- Citation
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.9, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
- Volume
- 9
- Number
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/58336
- DOI
- 10.1149/2162-8777/aba406
- ISSN
- 2162-8769
- Abstract
- The low thermal conductivity and the absence of effective acceptors limit the potential utility of beta-Ga(2)O(3)electronics. Herein, to generate an n-channel beta-Ga(2)O(3)heterojunction field-effect transistor (FET) with efficient thermal management, n-type beta-Ga(2)O(3)as a channel layer was integrated with p-type 4H-SiC as both a gate and a thermal drain via van der Waals interaction. The n-p beta-Ga2O3/4H-SiC heterojunction displayed typical rectifying behavior with an ideality factor of 1.4 and a rectification ratio of similar to 10(7). The fabricated beta-Ga(2)O(3)heterojunction FET operated in depletion mode with current saturation above the pinch-off voltage, which is consistent with the results of numerical device simulation. Excellent output and transfer characteristics were observed, including no hysteresis, low subthreshold swing (similar to 114 mV dec(-1)), and a high output current on/off ratio (similar to 10(8)). The numerical heat simulation indicated that the integration of beta-Ga(2)O(3)with 4H-SiC could greatly lower the peak operating temperature (by >70 degrees C), thereby improving the long-term reliability and stability of the beta-Ga2O3-based electronic devices.
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