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A research of properties of p-GaN layers after rapid thermal annealing (RTA) treatmentA research of properties of p-GaN layers after rapid thermal annealing (RTA) treatment

Alternative Title
A research of properties of p-GaN layers after rapid thermal annealing (RTA) treatment
Authors
BYUN, Dong Jin
Issue Date
31-1월-2007
Publisher
Korea University
Citation
2007 bk21 Korea Unversity-Osaka University Workshop On Advanced Device And Materials
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/59911
Conference Name
2007 bk21 Korea Unversity-Osaka University Workshop On Advanced Device And Materials
Place
KO
Seoul, Korea
Conference Date
2007-01-30
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BYUN, Dong Jin
공과대학 (신소재공학부)
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