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Characteristics of GaN-based HEMT on N+-Ion-Implanted Sapphire Substrates by MOCVDCharacteristics of GaN-based HEMT on N+-Ion-Implanted Sapphire Substrates by MOCVD
- Alternative Title
- Characteristics of GaN-based HEMT on N+-Ion-Implanted Sapphire Substrates by MOCVD
- Authors
- BYUN, Dong Jin
- Issue Date
- 29-11월-2006
- Publisher
- The Institute of Electrical Engineers of Japan
- Citation
- INTERNATIONAL SYMPOSIUM ON DRY PROECESS(DPS 2006)
- Conference Name
- INTERNATIONAL SYMPOSIUM ON DRY PROECESS(DPS 2006)
- Place
- JA
Nagoya, Japan
- Conference Date
- 2006-11-29
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