Annealing of Proton and Alpha Particle Damage in Au-W/beta-Ga2O3 Rectifiers
- Authors
- Xian, Minghan; Fares, Chaker; Bae, Jinho; Kim, Jihyun; Ren, Fan; Pearton, S. J.
- Issue Date
- 13-12월-2019
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.8, no.12, pp.P799 - P804
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
- Volume
- 8
- Number
- 12
- Start Page
- P799
- End Page
- P804
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/60925
- DOI
- 10.1149/2.0231912jss
- ISSN
- 2162-8769
- Abstract
- Vertical geometry Ga2O3 rectifiers were irradiated with 18 MeV alpha particles to fluences of 1-3 x 10(13) cm(-2) or 10 MeV protons to fluences of 1-3 x 10(14) cm(-2) and then annealed to establish the thermal stability of the radiation damage. The rectifiers employed Au/W rectifying contacts to achieve the requisite thermal stability to allow for annealing studies. The carrier removal rates were similar to 900 cm(-1) for the a-particles and similar to 200 for the protons. Annealing at 500 degrees C was found to restore the carrier concentration in the alpha-particle irradiated devices, while 450 degrees C annealing brought substantial recovery of the proton irradiated devices. This is a similar temperature range as established for annealing of plasma-induced damage in Ga2O3, suggesting a common origin of point defects, predominantly Ga vacancies and their complexes. The reverse breakdown voltages and diode on/off ratios are also significantly recovered by annealing after irradiation. (c) 2019 The Electrochemical Society.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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