Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors
DC Field | Value | Language |
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dc.contributor.author | Lee, Byeong Hyeon | - |
dc.contributor.author | Hong, Sae-Young | - |
dc.contributor.author | Kim, Dae-Hwan | - |
dc.contributor.author | Kim, Sangsig | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.contributor.author | Lee, Sang Yeol | - |
dc.date.accessioned | 2021-08-31T22:08:48Z | - |
dc.date.available | 2021-08-31T22:08:48Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2019-12-01 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/60986 | - |
dc.description.abstract | High-performance amorphous SiZnSnO thin-film transistors (a-SZTO TFTs) were fabricated using radio-frequency (RF) magnetron sputtering. The noise spectral density of a-SZTO TFTs measured by using the drain current has been reported, and it was found that is possible to apply the conventional 1/(fa) theory to the lowfrequency noise (LFN) of the a-SZTO TFTs. The LFN characteristics of a-SZTO TFTs can be clearly identified by the correlated number fluctuation-mobility fluctuation model. Based on the noise properties, the interfacial trap density (N-T) was decreased from 2.32 x 10(19) to 1.33 x 10(19) cm(-3) eV(-1) as increasing Si ratio in a-SZTO TFTs. The electrical characteristics and LFN properties of a-SZTO TFTs varied strongly depending on the Si ratio, mainly because the Si atom can act as an oxygen vacancy suppressor. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | LOW-FREQUENCY NOISE | - |
dc.subject | TEMPERATURE | - |
dc.subject | TRANSPORT | - |
dc.subject | MOBILITY | - |
dc.subject | METAL | - |
dc.subject | TFTS | - |
dc.title | Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1016/j.physb.2019.08.006 | - |
dc.identifier.scopusid | 2-s2.0-85071720344 | - |
dc.identifier.wosid | 000488767900016 | - |
dc.identifier.bibliographicCitation | PHYSICA B-CONDENSED MATTER, v.574 | - |
dc.relation.isPartOf | PHYSICA B-CONDENSED MATTER | - |
dc.citation.title | PHYSICA B-CONDENSED MATTER | - |
dc.citation.volume | 574 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | LOW-FREQUENCY NOISE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | TFTS | - |
dc.subject.keywordAuthor | Low-frequency noise | - |
dc.subject.keywordAuthor | Amorphous oxide semiconductor | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Silicon zinc tin oxide | - |
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