Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors
- Authors
- Lee, Byeong Hyeon; Hong, Sae-Young; Kim, Dae-Hwan; Kim, Sangsig; Kwon, Hyuck-In; Lee, Sang Yeol
- Issue Date
- 1-12월-2019
- Publisher
- ELSEVIER
- Keywords
- Low-frequency noise; Amorphous oxide semiconductor; Thin film transistor; Silicon zinc tin oxide
- Citation
- PHYSICA B-CONDENSED MATTER, v.574
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA B-CONDENSED MATTER
- Volume
- 574
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/60986
- DOI
- 10.1016/j.physb.2019.08.006
- ISSN
- 0921-4526
- Abstract
- High-performance amorphous SiZnSnO thin-film transistors (a-SZTO TFTs) were fabricated using radio-frequency (RF) magnetron sputtering. The noise spectral density of a-SZTO TFTs measured by using the drain current has been reported, and it was found that is possible to apply the conventional 1/(fa) theory to the lowfrequency noise (LFN) of the a-SZTO TFTs. The LFN characteristics of a-SZTO TFTs can be clearly identified by the correlated number fluctuation-mobility fluctuation model. Based on the noise properties, the interfacial trap density (N-T) was decreased from 2.32 x 10(19) to 1.33 x 10(19) cm(-3) eV(-1) as increasing Si ratio in a-SZTO TFTs. The electrical characteristics and LFN properties of a-SZTO TFTs varied strongly depending on the Si ratio, mainly because the Si atom can act as an oxygen vacancy suppressor.
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