Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor With a Nitride Charge-Storage Layer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Hyungu | - |
dc.contributor.author | Cho, Jinsun | - |
dc.contributor.author | Kim, Yoonjoong | - |
dc.contributor.author | Lim, Doohyeok | - |
dc.contributor.author | Woo, Sola | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-01T10:03:03Z | - |
dc.date.available | 2021-09-01T10:03:03Z | - |
dc.date.issued | 2019-08 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/63589 | - |
dc.description.abstract | We demonstrate the nonvolatile and volatile memory characteristics of a gate-all-around silicon nanowire feedback field-effect transistor (FBFET) with a nitride charge-storage layer analyzed by a commercial TCAD simulator. Our FBFET exhibits a threshold voltage windowof 0.76 V with a programming/erasing time of 1 mu s in the nonvolatile memory mode. We investigated the delay of read operations with accumulated charges in the intrinsic channel region in this memory mode. Moreover, the FBFET exhibits a sensing margin of 6.3 mu A and a read/write speed of 10 ns with an outstanding retention time, as well as nondestructive read characteristics in the volatile memory mode, allowing this device to operate without any refresh operation. In addition, we describe the operating principle of our device and demonstrate its potential as integrated memory for 3-D integrations. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor With a Nitride Charge-Storage Layer | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/TED.2019.2924961 | - |
dc.identifier.scopusid | 2-s2.0-85069944533 | - |
dc.identifier.wosid | 000477697400015 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.8, pp 3342 - 3348 | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 66 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 3342 | - |
dc.citation.endPage | 3348 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CELL | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | DRAM | - |
dc.subject.keywordAuthor | Feedback field-effect transistor (FBFET) | - |
dc.subject.keywordAuthor | integration | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
dc.subject.keywordAuthor | positive feedback loop | - |
dc.subject.keywordAuthor | volatile memory | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.