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Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor With a Nitride Charge-Storage Layer

Authors
Kang, HyunguCho, JinsunKim, YoonjoongLim, DoohyeokWoo, SolaCho, KyoungahKim, Sangsig
Issue Date
8월-2019
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Feedback field-effect transistor (FBFET); integration; nonvolatile memory; positive feedback loop; volatile memory
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.8, pp.3342 - 3348
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume
66
Number
8
Start Page
3342
End Page
3348
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/63589
DOI
10.1109/TED.2019.2924961
ISSN
0018-9383
Abstract
We demonstrate the nonvolatile and volatile memory characteristics of a gate-all-around silicon nanowire feedback field-effect transistor (FBFET) with a nitride charge-storage layer analyzed by a commercial TCAD simulator. Our FBFET exhibits a threshold voltage windowof 0.76 V with a programming/erasing time of 1 mu s in the nonvolatile memory mode. We investigated the delay of read operations with accumulated charges in the intrinsic channel region in this memory mode. Moreover, the FBFET exhibits a sensing margin of 6.3 mu A and a read/write speed of 10 ns with an outstanding retention time, as well as nondestructive read characteristics in the volatile memory mode, allowing this device to operate without any refresh operation. In addition, we describe the operating principle of our device and demonstrate its potential as integrated memory for 3-D integrations.
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