Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry
DC Field | Value | Language |
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dc.contributor.author | Dong, Sining | - |
dc.contributor.author | Wang, Yong-Lei | - |
dc.contributor.author | Bac, Seul-Ki | - |
dc.contributor.author | Liu, Xinyu | - |
dc.contributor.author | Vlasko-Vlasov, Vitalii | - |
dc.contributor.author | Kwok, Wai-Kwong | - |
dc.contributor.author | Rouvimov, Sergei | - |
dc.contributor.author | Lee, Sanghoon | - |
dc.contributor.author | Dobrowolska, Margaret | - |
dc.contributor.author | Furdyna, Jacek K. | - |
dc.date.accessioned | 2021-09-01T11:29:03Z | - |
dc.date.available | 2021-09-01T11:29:03Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-07-19 | - |
dc.identifier.issn | 2475-9953 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/64084 | - |
dc.description.abstract | We report on the observation of a field-induced magnetic bias effect in a Ga0.94Mn0.06As1-yPy thin film with digitally graded phosphorus content. Although phosphorus concentration in the sample is changed in steps from y approximate to 0.03 to y approximate to 0.28, the magnetometry and magnetotransport data display a coherent magnetic response typical for single-layer in-plane magnetized films with cubic and weak [110] uniaxial anisotropy. Unexpectedly, low-temperature planar Hall resistance loops exhibit remarkable asymmetry tunable by application of strong in-plane initial magnetic field H-Ini. We discuss this unusual memory effect, resembling the magnetization asymmetry in the exchange biased magnetic bilayers, in terms of a unidirectional bias field H-b induced by H-Ini. We show that such bias field defines the delayed or accelerated nucleation of domains with chiral domain walls performing the magnetization reversal. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.subject | MAGNETIZATION | - |
dc.subject | ANISOTROPY | - |
dc.title | Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Sanghoon | - |
dc.identifier.doi | 10.1103/PhysRevMaterials.3.074407 | - |
dc.identifier.scopusid | 2-s2.0-85073641843 | - |
dc.identifier.wosid | 000476698900002 | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW MATERIALS, v.3, no.7 | - |
dc.relation.isPartOf | PHYSICAL REVIEW MATERIALS | - |
dc.citation.title | PHYSICAL REVIEW MATERIALS | - |
dc.citation.volume | 3 | - |
dc.citation.number | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | MAGNETIZATION | - |
dc.subject.keywordPlus | ANISOTROPY | - |
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