Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry
- Authors
- Dong, Sining; Wang, Yong-Lei; Bac, Seul-Ki; Liu, Xinyu; Vlasko-Vlasov, Vitalii; Kwok, Wai-Kwong; Rouvimov, Sergei; Lee, Sanghoon; Dobrowolska, Margaret; Furdyna, Jacek K.
- Issue Date
- 19-7월-2019
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW MATERIALS, v.3, no.7
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICAL REVIEW MATERIALS
- Volume
- 3
- Number
- 7
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/64084
- DOI
- 10.1103/PhysRevMaterials.3.074407
- ISSN
- 2475-9953
- Abstract
- We report on the observation of a field-induced magnetic bias effect in a Ga0.94Mn0.06As1-yPy thin film with digitally graded phosphorus content. Although phosphorus concentration in the sample is changed in steps from y approximate to 0.03 to y approximate to 0.28, the magnetometry and magnetotransport data display a coherent magnetic response typical for single-layer in-plane magnetized films with cubic and weak [110] uniaxial anisotropy. Unexpectedly, low-temperature planar Hall resistance loops exhibit remarkable asymmetry tunable by application of strong in-plane initial magnetic field H-Ini. We discuss this unusual memory effect, resembling the magnetization asymmetry in the exchange biased magnetic bilayers, in terms of a unidirectional bias field H-b induced by H-Ini. We show that such bias field defines the delayed or accelerated nucleation of domains with chiral domain walls performing the magnetization reversal.
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Collections - College of Science > Department of Physics > 1. Journal Articles
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