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Detector performance and defect densities in CdZnTe after two-step annealing
- Issue Date
- 11-4월-2019
- Publisher
- ELSEVIER
- Keywords
- CdZnTe; Nanoscale defects; Microscale defects; Annealing; Dislocation; Stacking fault
- Citation
- NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.923, pp.51 - 54
- Indexed
- SCIE
SCOPUS
- Volume
- 923
- Start Page
- 51
- End Page
- 54
- ISSN
- 0168-9002
- Abstract
- Defects both microscale and nanoscale are play an important role in CdZnTe (CZT) device performance. Typical micro-scale defects such as Te inclusions were removed via a two-step annealing process, and their concentration was analyzed via IR transmission microscopy. In addition, transmission electron microscopy (TEM) measurement was employed to investigate the evolution of nano-scale defects after the annealing process. Dislocation and stacking faults were commonly observed defects in as-grown and annealed CZT. The line shape defects, which are possibly related to the stress field around dislocations, disappeared during the in-situ the annealing at 200-220 C. A Frisch-grid CZT detector made via the two-step annealing process exhibited improved energy resolution and low backscattering counts in Cs-137 gamma spectra.
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