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A single gas barrier layer of high-density Al2O3 formed by neutral beam-assisted sputtering at room temperature
- Authors
- Jang, YunSung; Shin, SeungMin; Yi, Seungjun; Hong, MunPyo
- Issue Date
- 31-3월-2019
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Gas barrier; Encapsulation; WVTR; Aluminum oxide; Flexible OLED; Sputtering; Plastic; Neutral beam
- Citation
- THIN SOLID FILMS, v.674, pp.52 - 57
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 674
- Start Page
- 52
- End Page
- 57
- ISSN
- 0040-6090
- Abstract
- This paper reveals the formation of high-density Al2O3 thin films at low temperatures for inorganic gas barriers using neutral beam-assisted sputtering (NBAS). The NBAS induces an annealing effect even at room temperature through energetic neut.al particles, leading to an enhancement in the density of Al2O3 thin films. As a result, we obtained a water vapor transmission rate of 1.58 x 10(-5)g/(m(2).day) using a single layer of Al2O3 thin film at a thickness of 100 nm. In the NBAS, the energetic neutral particle bombardment of the thin film occurs during magnetron sputtering. The high-density Al2O3 gas barrier films formed by the NBAS show applicability to organic microelectronic devices, including organic light-emitting diodes.
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Collections - Graduate School > Department of Applied Physics > 1. Journal Articles
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