Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy
- Authors
- Chongthanaphisut, Phunvira; Bac, Seul-Ki; Choi, Seonghoon; Lee, Kyung Jae; Chang, Jihoon; Choi, Suho; Lee, Sanghoon; Nnaji, Moses; Liu, X.; Dobrowolska, M.; Furdyna, J. K.
- Issue Date
- 18-3월-2019
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 9
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/66641
- DOI
- 10.1038/s41598-019-41138-9
- ISSN
- 2045-2322
- Abstract
- We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.
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Collections - College of Science > Department of Physics > 1. Journal Articles
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