Performance improvements of ZnO thin film transistors with reduced graphene oxide-embedded channel layers
DC Field | Value | Language |
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dc.contributor.author | Oh, Sungmin | - |
dc.contributor.author | Lee, Tae Ho | - |
dc.contributor.author | Chae, Myung-Sic | - |
dc.contributor.author | Park, Ju Hyun | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-01T17:22:41Z | - |
dc.date.available | 2021-09-01T17:22:41Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-03-10 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/66687 | - |
dc.description.abstract | ZnO thin film transistors (TFTs) with reduced graphene oxide (RGO)-embedded channel layers were fabricated and their electrical properties were compared with those of ZnO TFTs with no embedded layer (bare ZnO TFT), with Cr-embedded channel layers, and with a RGO/ZnO bilayer channel. Compared to the reference samples, the proposed ZnO TFTs with RGO-embedded layers exhibited very stable unipolar transfer characteristics with enhanced carrier mobility of 1.13 cm(2)V(-1)s(-1), subthreshold swing of 0.53 V decade(-1), and on/off ratio of 2.31 x 10(7), unlike most previous reports of graphene-embedded ZnO TFTs which exhibited undesirable ambipolar behavior. These improvements are attributed to the high carrier mobility of the RGO layer and the formation of the ZnO-RGO-ZnO area as a leakage prevention barrier in the negative bias region. In addition, through X-ray photoelectron spectroscopy analysis, it was found that the formation of Zn-C bonds allows for the stable operation of the proposed RGO-embedded ZnO TFT. These results will provide important information for the design of high-mobility TFT architectures for various applications. (C) 2018 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | HIGH-MOBILITY | - |
dc.subject | POLY-SI | - |
dc.subject | METAL | - |
dc.subject | TRANSPARENT | - |
dc.subject | ENHANCEMENT | - |
dc.title | Performance improvements of ZnO thin film transistors with reduced graphene oxide-embedded channel layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1016/j.jallcom.2018.11.004 | - |
dc.identifier.scopusid | 2-s2.0-85056583330 | - |
dc.identifier.wosid | 000454856800164 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.777, pp.1367 - 1374 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 777 | - |
dc.citation.startPage | 1367 | - |
dc.citation.endPage | 1374 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | POLY-SI | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Zinc oxide | - |
dc.subject.keywordAuthor | Indium-free | - |
dc.subject.keywordAuthor | Reduced graphene oxide | - |
dc.subject.keywordAuthor | Saturation mobility | - |
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