Performance improvements of ZnO thin film transistors with reduced graphene oxide-embedded channel layers
- Authors
- Oh, Sungmin; Lee, Tae Ho; Chae, Myung-Sic; Park, Ju Hyun; Kim, Tae Geun
- Issue Date
- 10-3월-2019
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Thin film transistor; Zinc oxide; Indium-free; Reduced graphene oxide; Saturation mobility
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.777, pp.1367 - 1374
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 777
- Start Page
- 1367
- End Page
- 1374
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/66687
- DOI
- 10.1016/j.jallcom.2018.11.004
- ISSN
- 0925-8388
- Abstract
- ZnO thin film transistors (TFTs) with reduced graphene oxide (RGO)-embedded channel layers were fabricated and their electrical properties were compared with those of ZnO TFTs with no embedded layer (bare ZnO TFT), with Cr-embedded channel layers, and with a RGO/ZnO bilayer channel. Compared to the reference samples, the proposed ZnO TFTs with RGO-embedded layers exhibited very stable unipolar transfer characteristics with enhanced carrier mobility of 1.13 cm(2)V(-1)s(-1), subthreshold swing of 0.53 V decade(-1), and on/off ratio of 2.31 x 10(7), unlike most previous reports of graphene-embedded ZnO TFTs which exhibited undesirable ambipolar behavior. These improvements are attributed to the high carrier mobility of the RGO layer and the formation of the ZnO-RGO-ZnO area as a leakage prevention barrier in the negative bias region. In addition, through X-ray photoelectron spectroscopy analysis, it was found that the formation of Zn-C bonds allows for the stable operation of the proposed RGO-embedded ZnO TFT. These results will provide important information for the design of high-mobility TFT architectures for various applications. (C) 2018 Elsevier B.V. All rights reserved.
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