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Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide

Authors
Lee, Byung ChulNa, JunhongChoi, Jun HeeJi, HyunjinKim, Gyu-TaeJoo, Min-Kyu
Issue Date
8-2월-2019
Publisher
WILEY-V C H VERLAG GMBH
Keywords
anisotropy transport; charge conduction mechanism; Coulomb screening; multilayer; rhenium disulfide
Citation
ADVANCED MATERIALS, v.31, no.6
Indexed
SCIE
SCOPUS
Journal Title
ADVANCED MATERIALS
Volume
31
Number
6
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/67646
DOI
10.1002/adma.201805860
ISSN
0935-9648
Abstract
Charge carrier transport in multilayer van der Waals (vdW) materials, which comprise multiple conducting layers, is well described using Thomas-Fermi charge screening (lambda(TF)) and interlayer resistance (R-int). When both effects occur in carrier transport, a channel centroid migrates along the c-axis according to a vertical electrostatic force, causing redistribution of the conduction centroid in a multilayer system, unlike a conventional bulk material. Thus far, numerous unique properties of vdW materials are discovered, but direct evidence for distinctive charge transport behavior in 2D layered materials is not demonstrated. Herein, the distinctive electron conduction features are reported in a multilayer rhenium disulfide (ReS2), which provides decoupled vdW interaction between adjacent layers and much high interlayer resistivity in comparison with other transition-metal dichalcogenides materials. The existence of two plateaus in its transconductance curve clearly reveals the relocation of conduction paths with respect to the top and bottom surfaces, which is rationalized by a theoretical resistor network model by accounting of lambda(TF) and R-int coupling. The effective tunneling distance probed via low-frequency noise spectroscopy further supports the shift of electron conduction channel along the thickness of ReS2.
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공과대학 (전기전자공학부)
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