Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Spin-Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor
- Authors
- Lee, Sanghoon; Lee, Sangyeop; Bac, Seul-Ki; Choi, Seonghoon; Liu, Xinyu; Dobrowolska, M.; Furdyna, Jacek K.
- Issue Date
- 2월-2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Crystalline ferromagnetic films; magnetic anisotropy; planar Hall effect (PHE); spin-orbit-induced (SOI) field
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.55, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON MAGNETICS
- Volume
- 55
- Number
- 2
- ISSN
- 0018-9464
- Abstract
- Spin-orbit-induced (SOI) field of crystalline GaMnAs ferromagnetic film has been investigated by using planar Hall effect measurements. The presence of SOI field manifested itself as an asymmetry in the magnetization reversal process between positive and negative current directions. A significant Joule heating caused by current has been observed and its effect was carefully considered to obtain the magnetic anisotropy of the GaMnAs film. The switching of magnetization by SOI field in the GaMnAs film was demonstrated in the absence of an external field.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.