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Spin-Orbit-Induced Effective Magnetic Field in GaMnAs Ferromagnetic Semiconductor

Authors
Lee, SanghoonLee, SangyeopBac, Seul-KiChoi, SeonghoonLiu, XinyuDobrowolska, M.Furdyna, Jacek K.
Issue Date
2월-2019
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Crystalline ferromagnetic films; magnetic anisotropy; planar Hall effect (PHE); spin-orbit-induced (SOI) field
Citation
IEEE TRANSACTIONS ON MAGNETICS, v.55, no.2
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON MAGNETICS
Volume
55
Number
2
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/67814
DOI
10.1109/TMAG.2018.2862867
ISSN
0018-9464
Abstract
Spin-orbit-induced (SOI) field of crystalline GaMnAs ferromagnetic film has been investigated by using planar Hall effect measurements. The presence of SOI field manifested itself as an asymmetry in the magnetization reversal process between positive and negative current directions. A significant Joule heating caused by current has been observed and its effect was carefully considered to obtain the magnetic anisotropy of the GaMnAs film. The switching of magnetization by SOI field in the GaMnAs film was demonstrated in the absence of an external field.
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