Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs With Metal-Interlayer-Semiconductor Source/Drain Contact Structure
DC Field | Value | Language |
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dc.contributor.author | Jung, Seung-Geun | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2021-09-01T22:41:43Z | - |
dc.date.available | 2021-09-01T22:41:43Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019 | - |
dc.identifier.issn | 2168-6734 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/68893 | - |
dc.description.abstract | The impact of random dopant fluctuation (RDF) on n-type Ge junctionless FinFETs (JLFETs) with metal-interlayer-semiconductor (MIS) source/drain (S/D) contact structure is firstly investigated via 3-D technology computer aided design (TCAD) simulations. The estimation and evaluation of standard deviations in threshold voltage (V-th), on-state current (I-on), off-state current (I-off), subthreshold swing (SS), and drain induced barrier lowering (DIBL) by different Ge nanowire doping concentrations and different heights for RDF effects are performed. The results show a decreasing trend of RDF with lower doping concentration of the device. Furthermore, the influence of MIS S/D on RDF of n-type Ge JLFET is assessed through a comparative analysis between an n-type Ge JLFETs with and without MIS S/D structure. The analysis results estimate that MIS S/D can reduce performance variation to approximately 0.0237 V for sigma Vth, 5.75 x 10(-5) A/um for sigma I-on, 4.30 x 10(-1)0 A/um for sigma I-off,I- 0.548 mV/dec for sigma SS, and 12.3 mV/V for DIBL, without severe performance degradation of the current nominal values. This estimation gives a significant insight on variability prediction of the 7 nm n-type Ge JLFET device with MIS S/D structure. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | FIELD-EFFECT TRANSISTOR | - |
dc.subject | PERFORMANCE | - |
dc.title | Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs With Metal-Interlayer-Semiconductor Source/Drain Contact Structure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1109/JEDS.2019.2949566 | - |
dc.identifier.scopusid | 2-s2.0-85074540316 | - |
dc.identifier.wosid | 000497758500002 | - |
dc.identifier.bibliographicCitation | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.1119 - 1124 | - |
dc.relation.isPartOf | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - |
dc.citation.title | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - |
dc.citation.volume | 7 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1119 | - |
dc.citation.endPage | 1124 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTOR | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Junctionless FET | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | metal-inter layer-semiconductor source | - |
dc.subject.keywordAuthor | drain | - |
dc.subject.keywordAuthor | 3-D TCAD | - |
dc.subject.keywordAuthor | random dopant fluctuation (RDF) | - |
dc.subject.keywordAuthor | line-edge roughness (LER) | - |
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