Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs With Metal-Interlayer-Semiconductor Source/Drain Contact Structure
- Authors
- Jung, Seung-Geun; Yu, Hyun-Yong
- Issue Date
- 2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Junctionless FET; germanium; metal-inter layer-semiconductor source; drain; 3-D TCAD; random dopant fluctuation (RDF); line-edge roughness (LER)
- Citation
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.1119 - 1124
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
- Volume
- 7
- Number
- 1
- Start Page
- 1119
- End Page
- 1124
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/68893
- DOI
- 10.1109/JEDS.2019.2949566
- ISSN
- 2168-6734
- Abstract
- The impact of random dopant fluctuation (RDF) on n-type Ge junctionless FinFETs (JLFETs) with metal-interlayer-semiconductor (MIS) source/drain (S/D) contact structure is firstly investigated via 3-D technology computer aided design (TCAD) simulations. The estimation and evaluation of standard deviations in threshold voltage (V-th), on-state current (I-on), off-state current (I-off), subthreshold swing (SS), and drain induced barrier lowering (DIBL) by different Ge nanowire doping concentrations and different heights for RDF effects are performed. The results show a decreasing trend of RDF with lower doping concentration of the device. Furthermore, the influence of MIS S/D on RDF of n-type Ge JLFET is assessed through a comparative analysis between an n-type Ge JLFETs with and without MIS S/D structure. The analysis results estimate that MIS S/D can reduce performance variation to approximately 0.0237 V for sigma Vth, 5.75 x 10(-5) A/um for sigma I-on, 4.30 x 10(-1)0 A/um for sigma I-off,I- 0.548 mV/dec for sigma SS, and 12.3 mV/V for DIBL, without severe performance degradation of the current nominal values. This estimation gives a significant insight on variability prediction of the 7 nm n-type Ge JLFET device with MIS S/D structure.
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