Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

PLASMA PARAMETERS AND KINETICS OF ACTIVE SPECIES IN HBr

Full metadata record
DC Field Value Language
dc.contributor.authorEfremov, Aleksandr M.-
dc.contributor.authorBetelin, Vladimir B.-
dc.contributor.authorKwon, Kwang-Ho-
dc.contributor.authorSnegirev, Dmitriy G.-
dc.date.accessioned2021-09-01T22:49:43Z-
dc.date.available2021-09-01T22:49:43Z-
dc.date.created2021-06-19-
dc.date.issued2019-
dc.identifier.issn0579-2991-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/68971-
dc.description.abstractIn this work, we performed the combined (experimental and model-based) study of gas-phase plasma characteristics for HBr + Cl-2 + O-2 gas mixture under conditions of low-pressure inductive 13.56 MHz discharge. The data on internal plasma parameters, plasma chemistry as well as the steady-state plasma composition were obtained using a combination of Langmuir probe diagnostics and 0-dimensional (global) plasma modeling. Both experimental and modeling procedures were carried out at constant total gas pressure (p = 10 mTorr), input power (W = 500 W), bias power (W-dc = 200 W) and O-2 fraction in a feed gas (y(O-2) = 11 %). The variable parameter was the HBr + Cl-2 mixing ratio, which was changed in the range of 0 - 89 % Cl-2. It was found that, under the given set of experimental conditions, the substitution of HBr for Cl-2: 1) results in increasing both mean electron energy and electron density; 2) causes the mon-monotonic (with a maximum at similar to 45 % Cl-2) change in Br atom density; and 3) provides an increase in O atom density at y(O-2) = const. The possible impacts of HBr + Cl-2 mixing ratio on Si and SiO2 etching kinetics were estimated through the analysis of model-predicted fluxes for plasma active species (Br, Cl and O atoms, positive ions).-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIVANOVSKOGO KHIMIKO-TEKHNOLOGI TSHESKOGO INST-
dc.subjectMODEL-BASED ANALYSIS-
dc.subjectETCHING CHARACTERISTICS-
dc.subjectSURFACE KINETICS-
dc.subjectGRUNBERG-NISSAN-
dc.subjectMIXTURES-
dc.subjectPROFILE-
dc.subjectCL-2-
dc.subjectAR-
dc.subjectHE-
dc.titlePLASMA PARAMETERS AND KINETICS OF ACTIVE SPECIES IN HBr-
dc.typeArticle-
dc.contributor.affiliatedAuthorKwon, Kwang-Ho-
dc.identifier.doi10.6060/ivkkt.20196207.5947-
dc.identifier.scopusid2-s2.0-85071138119-
dc.identifier.wosid000477768400008-
dc.identifier.bibliographicCitationIZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA, v.62, no.7, pp.72 - 79-
dc.relation.isPartOfIZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA-
dc.citation.titleIZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA-
dc.citation.volume62-
dc.citation.number7-
dc.citation.startPage72-
dc.citation.endPage79-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.subject.keywordPlusMODEL-BASED ANALYSIS-
dc.subject.keywordPlusETCHING CHARACTERISTICS-
dc.subject.keywordPlusSURFACE KINETICS-
dc.subject.keywordPlusGRUNBERG-NISSAN-
dc.subject.keywordPlusMIXTURES-
dc.subject.keywordPlusPROFILE-
dc.subject.keywordPlusCL-2-
dc.subject.keywordPlusAR-
dc.subject.keywordPlusHE-
dc.subject.keywordAuthorplasma parameters-
dc.subject.keywordAuthorreaction rate-
dc.subject.keywordAuthorhalogen atom flux-
dc.subject.keywordAuthorion energy flux-
dc.subject.keywordAuthorSi and SiO2 etching rates-
Files in This Item
There are no files associated with this item.
Appears in
Collections
Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Kwon, Kwang Ho photo

Kwon, Kwang Ho
제어계측공학과
Read more

Altmetrics

Total Views & Downloads

BROWSE