PLASMA PARAMETERS AND KINETICS OF ACTIVE SPECIES IN HBr
- Authors
- Efremov, Aleksandr M.; Betelin, Vladimir B.; Kwon, Kwang-Ho; Snegirev, Dmitriy G.
- Issue Date
- 2019
- Publisher
- IVANOVSKOGO KHIMIKO-TEKHNOLOGI TSHESKOGO INST
- Keywords
- plasma parameters; reaction rate; halogen atom flux; ion energy flux; Si and SiO2 etching rates
- Citation
- IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA, v.62, no.7, pp.72 - 79
- Indexed
- SCOPUS
- Journal Title
- IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA
- Volume
- 62
- Number
- 7
- Start Page
- 72
- End Page
- 79
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/68971
- DOI
- 10.6060/ivkkt.20196207.5947
- ISSN
- 0579-2991
- Abstract
- In this work, we performed the combined (experimental and model-based) study of gas-phase plasma characteristics for HBr + Cl-2 + O-2 gas mixture under conditions of low-pressure inductive 13.56 MHz discharge. The data on internal plasma parameters, plasma chemistry as well as the steady-state plasma composition were obtained using a combination of Langmuir probe diagnostics and 0-dimensional (global) plasma modeling. Both experimental and modeling procedures were carried out at constant total gas pressure (p = 10 mTorr), input power (W = 500 W), bias power (W-dc = 200 W) and O-2 fraction in a feed gas (y(O-2) = 11 %). The variable parameter was the HBr + Cl-2 mixing ratio, which was changed in the range of 0 - 89 % Cl-2. It was found that, under the given set of experimental conditions, the substitution of HBr for Cl-2: 1) results in increasing both mean electron energy and electron density; 2) causes the mon-monotonic (with a maximum at similar to 45 % Cl-2) change in Br atom density; and 3) provides an increase in O atom density at y(O-2) = const. The possible impacts of HBr + Cl-2 mixing ratio on Si and SiO2 etching kinetics were estimated through the analysis of model-predicted fluxes for plasma active species (Br, Cl and O atoms, positive ions).
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Collections - Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles
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