Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain
DC Field | Value | Language |
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dc.contributor.author | Kim, Seung-Geun | - |
dc.contributor.author | Kim, Gwang-Sik | - |
dc.contributor.author | Kim, Seung-Hwan | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2021-09-02T02:23:47Z | - |
dc.date.available | 2021-09-02T02:23:47Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/71307 | - |
dc.description.abstract | We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (<= 500 degrees C) using rapid thermal annealing and pulsed green laser post- annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrationsof 1.82x10(20) cm(-3) and 9.27 x 10(20) cm(-3), respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | GE | - |
dc.subject | ENHANCEMENT | - |
dc.subject | DIFFUSION | - |
dc.subject | MOBILITY | - |
dc.title | Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1109/LED.2018.2875751 | - |
dc.identifier.scopusid | 2-s2.0-85055047701 | - |
dc.identifier.wosid | 000451587200001 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.39, no.12, pp.1828 - 1831 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 39 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1828 | - |
dc.citation.endPage | 1831 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | DIFFUSION | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordAuthor | CMOS technology | - |
dc.subject.keywordAuthor | hybrid dopant activation technique | - |
dc.subject.keywordAuthor | low-temperature doping method | - |
dc.subject.keywordAuthor | pulsed green laser | - |
dc.subject.keywordAuthor | SiGe source/drain | - |
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