Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain

Abstract

We present a novel hybrid dopant activation technique for n-type silicon-germanium (SiGe) to achieve high doping concentration and ultra-shallow junction at low temperature (<= 500 degrees C) using rapid thermal annealing and pulsed green laser post- annealing (hybrid RTA-GLA). The hybrid RTA-GLA process achieved one of the highest surface and peak doping concentrationsof 1.82x10(20) cm(-3) and 9.27 x 10(20) cm(-3), respectively, compared with low-temperature doping techniques for n-type SiGe. In addition, the n-type SiGe films doped by the hybrid RTA-GLA process provide ultra-shallow (<60 nm) and abrupt (5 nm/decade) junctions. This advanced low-temperature hybrid dopant activation technique is a promising method for developing SiGe-based electronics.