Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect transistor under bending stresses
- Authors
- Kim, Yoonjoong; Kim, Sangsig
- Issue Date
- 10월-2018
- Publisher
- IOP PUBLISHING LTD
- Keywords
- silicon nanowire; feedback field-effect transistor; positive feedback loop; bending stress; plastic substrate
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.33, no.10
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 33
- Number
- 10
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/73027
- DOI
- 10.1088/1361-6641/aadfb5
- ISSN
- 0268-1242
- Abstract
- In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p(+)-i-n(+) doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending.
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