Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics
- Authors
- Kim, Janghyuk; Mastro, Michael A.; Tadjer, Marko J.; Kim, Jihyun
- Issue Date
- 5-9월-2018
- Publisher
- AMER CHEMICAL SOC
- Keywords
- wide bandgap semiconductor; heterostructure; two-dimensional material; field-effect transistor; gallium oxide
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.10, no.35, pp.29724 - 29729
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 10
- Number
- 35
- Start Page
- 29724
- End Page
- 29729
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/73137
- DOI
- 10.1021/acsami.8b07030
- ISSN
- 1944-8244
- Abstract
- Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode beta-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of similar to 10(5) were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and beta-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent I-DS-V-DS output as well as I-DS-V-GS transfer characteristics with a high on/off ratio (similar to 10(8)) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2-Ga2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems.
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