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Extraction of Intrinsic Electrical Parameters in Partially Depleted MoS2 Field-Effect Transistors
- Issue Date
- Jul-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- 2-D transition-metal dichalcogenides (TMDs); bulk channel mobility; maximum depletion width; partially depleted (PD); series resistance
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.7, pp.3050 - 3053
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 65
- Number
- 7
- Start Page
- 3050
- End Page
- 3053
- ISSN
- 0018-9383
- Abstract
- Electrical performance and transport mechanisms in 2-D transition-metal dichalcogenide materials should be investigated under a range of electrical parameters for practical application. In this paper, partially depleted (PD) molybdenum disulfide (MoS2) transistors were fabricated with a thick flake mechanically exfoliated from bulk crystals, and their operating mechanism is discussed considering the gate-uncontrollable conduction channel, the maximum depletion width (D-max), and the impact of series resistance (R-sd). In addition, the intrinsic mobility of a neutral bulk channel in PD-MoS2 transistors was extracted from the simply separated gate-controllable drain current with a depletion approximation.
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Related Researcher
- Kim, Gyu Tae
- College of Engineering (School of Electrical Engineering)